Coupled distribute circuit-3D FEM model to simulate the transient electromagnetic performances of IGBTs

Article type: Research Article

Authors: Ma, Yuhan^a | Zheng, Taiying^a; | Yang, Shiyou^a

Affiliations: [a] College of Electrical Engineering, Zhejiang University, Hangzhou, China

Correspondence: [*] Corresponding author: Taiying Zheng, College of Electrical Engineering, Zhejiang University, Hangzhou, 310027, China. E-mail: [email protected]

Abstract: In order to quantitatively compute the magnetic field and current distributions in an Insulated Gate Bipolar Transistor (IGBT) considering the displacement currents and 3D eddy current neighboring effect to the lead in the fast switching-on and –off transients, a coupled distribute circuit-three dimensional (3D) finite element method (FEM) is developed, and its accuracy and merits are validated by comparing the numerical and tested results on a case study.

Keywords: IGBT, displacement current, 3D FEM

DOI: 10.3233/JAE-171184

Journal: International Journal of Applied Electromagnetics and Mechanics, vol. 59, no. 1, pp. 39-46, 2019