Affiliations: [a] Nuclear Engineering Research Laboratory, University of
Tokyo, 2-22 Shirakatashirane, Tokai, Naka, Ibaraki 319-1188, Japan
Correspondence:
[*]
Corresponding author: Kenichi Kinoshita, 2-22 Shirakatashirane,
Tokai, Naka, Ibaraki, 319-1188 Japan, Nuclear Engineering Research Laboratory,
University of Tokyo, Japan. Tel.: +81 29 287 8472; Fax: +81 29 287 8471;
E-mail: [email protected]
Abstract: For ultrafast material analyses, we constructed the time-resolved
X-ray diffraction system utilizing ultrashort X-rays from laser produced plasma
generated by the 12TW-50fs laser at Nuclear Engineering Research Laboratory.
Ultrafast transient changes in laser-irradiated GaAs crystals were observed as
X-ray diffraction patterns. A subpeak appears in X-ray diffraction profiles and
shifts its position gradually as time goes in the case of
1.3 mJ/mm^2 laser fluence. Experimental results were
compared with numerical analyses to infer the atomic arrangement during the
transition.
