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Issue title: 20th International Symposium on Applied Electromagnetics and Mechanics
Guest editors: Theodoros Theodoulidis, Christos Antonopoulos, Nikolaos Kantartzis, Ioannis Rekanos and Theodoros Zygiridis
Article type: Research Article
Authors: Itagaki, Ryoa; | Kanai, Yasushia | Greaves, Simonb
Affiliations: [a] Niigata Institute of Technology, Kashiwazaki, Japan | [b] Tohoku University, RIEC, Sendai, Japan
Correspondence: [*] Corresponding author: Ryo Itagaki, Niigata Institute of Technology, 1719 Fujihashi, Kashiwazaki 945-1195, Japan. E-mail: [email protected]
Abstract: Dual field generation layer (FGL) spin torque oscillators (STO) were investigated for use in microwave-assisted magnetic recording. The STOs were integrated into the gaps of write heads for stable oscillation. According to preliminary calculations, a FGL thickness of 5 nm was suitable, while the volume of 7.5 nm and 10 nm thick FGLs was too large and they did not oscillate stably. The most dominant factor influencing the FGL rotation was found to be the strength of the antiferromagnetic coupling between the FGLs. Other parameters were also varied, e.g., the exchange coupling between the negative spin injection layer (nSIL) and the trailing shield (TS), however, no significant effect was found. Unlike single FGL STOs, the oscillation frequency changed drastically, from 38 GHz to 73 GHz, on varying the injected current density to the STO. Recording simulations showed that the signal-to-noise ratio was maximized for an STO oscillation frequencies between 34 GHz and 50 GHz, depending on the recording media used in the calculations. Therefore, the dual FGL STO may be suitable for a wide range of recording media. Alternatively, the dual FGL STO may be used for dual-layer recording, where different resonance frequencies are needed for each of the layers, obviating the need for a second STO.
Keywords: Microwave-assisted magnetic recording (MAMR), spin torque oscillator (STO), write heads, micromagnetic simulation
DOI: 10.3233/JAE-220146
Journal: International Journal of Applied Electromagnetics and Mechanics, vol. 71, no. S1, pp. S191-S201, 2023
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