Asymptotic boundary conditions for an oxide region in a semiconductor device

Article type: Research Article

Authors: Gamba, Irene Martínez

Affiliations: Courant Institute of Mathematical Sciences, New York University, 251 Mercer St., New York, NY 10012, USA

Abstract: We study how the equations of the potential of a semiconductor device, as described by Markowich (1986) and Selberherr (1984), behave when the width and the permittivity of the oxide region go to zero. According to their ratio, the problems converge to different asymptotic limits. This provides the correct boundary value approximation to the full problem avoiding costly computations (see, as an example, the discussion in Chapter 5 of (Selberherr, 1984), about the boundary conditions).

DOI: 10.3233/ASY-1993-7104

Journal: Asymptotic Analysis, vol. 7, no. 1, pp. 37-48, 1993