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Issue title: Occupational Ergonomics and Safety, Part 2
Subtitle:
Guest editors: Pedro Arezes
Article type: Research Article
Authors: Chen, T.H. | Fan, C.F. | Wang, M.J.*
Affiliations: Department of Industrial Engineering and Engineering Management, National Tsing Hua University, Hsinchu, Taiwan
Correspondence: [*] Corresponding author: Mao-Jiun J. Wang, Department of Industrial Engineering and Engineering Management, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan. Tel.: +886 3 5742655; Fax: +886 3 5722204; E-mail:[email protected]
Abstract: BACKGROUND: Workplace noise exposure gains growing attention in high tech industry. OBJECTIVE: This study investigated the noise effect on physiological and subjective responses in semiconductor manufacturing clean room environment. METHODS: Twenty subjects including 10 males and 10 females completed all phases of the experiment. Each subject was asked to participate in four treatment combinations of two noise intensities [65 dB(A) and 80 dB(A)] × two frequency levels [high and low]. For each treatment condition, the subject was exposed to the specified noise condition in a sound proof cabin for one hour. The physiological measures included blood pressure and heart rate. The subjective measures included noise sensitivity, fatigue and annoyance. RESULTS: The ANOVA results indicate that long-time noise exposure caused significant increase in blood pressure (p< 0.001). Furthermore, the noise intensity by time interaction effect was found to be significant on annoyance and fatigue. CONCLUSIONS: The findings suggest that prolonged exposure to noise intensity at 80 dB(A) would result in a significant increase in physiological cost and subjective discomfort feeling. Thus, some countermeasures should be taken to reduce noise exposure and to promote health, and quality of working life.
Keywords: Noise exposure, exposure time, heart rate, blood pressure, annoyance, fatigue, semiconductor manufacturing
DOI: 10.3233/WOR-152034
Journal: Work, vol. 51, no. 4, pp. 771-780, 2015
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