Affiliations: Graduate School of Engineering, Tohoku University, Sendai, Japan
Note: [] Address for correspondence: A.T. Yokobori Jr., Graduate School of Engineering, Tohoku University, 6-6-01 Aoba, Aramaki, Aoba-ku, Sendai #980-8579, Miyagi, Japan. E-mail: [email protected].
Abstract: The problems of diffusion in solid are widely treated as those of numerical analyses such as mechanisms of hydrogen diffusion which causes embrittlement, boundary micro crack initiation and growth under high temperature creep condition and stress and electro-migration due to vacancy diffusion in LSI circuit. In this paper, the significance of α multiplication method which we proposed to analyze the particle diffusion problems under potential gradient and the results obtained from this method were discussed for the problems of hydrogen embrittlement, vacancy diffusion which results in creep crack damage and deformation, and line failure in LSI circuit. Furthermore, temperature characteristic of the sensitivity of particle diffusion and concentration such as hydrogen and vacancy were discussed based on this proposed analysis.
