Affiliations: Department of Electronics and Communication Engineering, Delhi Technological University, Delhi, India
Correspondence:
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Corresponding author: Poornima Mittal, Department of Electronics and Communication Engineering, Delhi Technological University, Delhi, India. E-mail: [email protected].
Abstract: Over recent years, Zinc Telluride (ZnTe) has garnered significant interest from researches. This p-type semiconductors boasts a broad band gap, rendering it valuable in various optoelectronic uses like solar cells, LEDs, and laser displays. Given the growing interest in environmentally friendly energy alternatives, exploring the potential of nano-scale semiconducting materials for solar cells is particularly intriguing. ZnTe stands out due to its direct, wide, and adjustable optical band gap, along with its simple doping process, positioning it as a promising candidate for applications in photochemistry. This study aims to consolidate the research conducted by multiple investigators concerning the optical characteristics and electrical attributes of ZnTe thin films. The primary focus is on understanding how deposition methods and doping impacts these properties. The investigation reveals that the diverse doping techniques employed by different researchers have been extensively examined, demonstrating a positive influence of doping on these properties as well. Following the creation of solar cells based on ZnTe, they have emerged as viable and competitive substitutes for silicon solar cells, thanks to their economical nature and stable performance. As a result, there has been notable focus on advancing ZnTe thin film solar cell technology due to their promising capacity to serve as sustainable energy generators.
