Abstract: The group 13 monoalkoxometallanes
[Me_{2}Ga(OC(CH_{3})_{2}CH_{2}OMe)]_{2}
(1) and
[Me_{2}In(OCH(CH_{3})CH_{2}OMe)]_{2}
(2), incorporating donor functionalised alkoxides, were synthesised from the
reaction of GaMe_{3} or InMe_{3} with ROH
(R=C(CH_{3})_{2}CH_{2}OMe (1);
R=CH(CH_{3})CH_{2}OMe (2)) in toluene.
X-ray crystallography showed that both compounds adopt dimeric structures with
a planar M_{2}O_{2} ring, and each group
13 atom is coordinated in a distorted trigonal bipyramidal geometry. The AACVD
reaction of GaMe_{3} and ROH (R
=C(CH_{3})_{2}CH_{2}OMe,
CH_{2}CH_{2}OMe,
CH_{2}CH_{2}NMe_{2})
resulted in the formation of thin films of
Ga_{2}O_{3} on glass substrates at
450°C. The gallium oxide films were analyzed by scanning electron
microscopy, X-ray powder diffraction, energy dispersive analysis of X-rays,
wavelength dispersive analysis of X-rays and X-ray photoelectron spectroscopy.
This CVD technique offers a rapid, convenient route to
Ga_{2}O_{3}, which involves the in situ
formation of dimethylgallium alkoxides, of the type
[Me_{2}Ga(μ-OR)]_{2} similar to
compound 1.
