Detection and Electrical Properties of Cd_1–xZn_xTe Detectors at Elevated Temperatures

Article type: Research Article

Authors: Egarievwe, S. U. | Chen, K.-T. | Burger, A. | James, R. B. | Lisse, C. M.

Affiliations: Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville,Tennessee 37208 | Advanced Materials Research Department, Sandia National Laboratories, Livermore, California 94550 | NASA/Goddard Space Flight Center/HSTF, Greenbelt, Maryland 20771

Note: [] To whom all correspondence should be addressed.

Abstract: We have studied the behavior of Cd1–xZnxTe detectors in the temperature range 24–70°C. The detector count rate stability and leakage currents are presented as a function of voltage, time, and temperature. Detector polarization due to bulk and surface effects leading to a decreased leakage current was observed. At 70°C, the position of the 32 keV photopeak of 133Ba was stable with time. The peak position varies within only 3 keV, and the peak quality factor varied between 0.31 and 0.41, for a 24 h period of operation at a 60 V bias. The net count to total count ratio was also stable, with values varying between 0.56 and 0.59. The net count to total count ratio decreased from 0.78 at 25°C to 0.71 at 60°C. The conclusion is that Cd1–xZnxTe is a promising material for gamma ray detection at temperatures above room temperature.

DOI: 10.3233/XST-1996-6401

Journal: Journal of X-Ray Science and Technology, vol. 6, no. 4, pp. 309-315, 1996