An Experimental and Theoretical Study of Pendellösung Fringes in Synchrotron Section Topographs of Silicon Wafers

Article type: Research Article

Authors: Partanen, J. | Tuomi, T.

Affiliations: Laboratory of Physics, Helsinki University of Technology, Otakaari 1 M, 02150 Espoo, Finland

Abstract: X-ray section topographs of nearly perfect Czochralski-grown wafers were made with synchrotron radiation having a continuous spectrum. An intensity curve measured from the x-ray film is compared to the calculated curve obtained using the dynamical theory of x-ray diffraction. A computer simulation of the topograph is also presented. A good agreement between theory and experiment is found except in the middle part of the topograph.

DOI: 10.3233/XST-1990-2302

Journal: Journal of X-Ray Science and Technology, vol. 2, no. 3, pp. 165-171, 1990