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Article type: Research Article
Authors: Zhang, Congli
Affiliations: Ningbo Institute of Northwestern Polytechnical University, Lane 218, Qingyi Road, Ningbo 315103, China | E-mail: [email protected]
Correspondence: [*] Ningbo Institute of Northwestern Polytechnical University, Lane 218, Qingyi Road, Ningbo 315103, China. E-mail: [email protected].
Abstract: Remarkable progress has been made to understand the chemical vapor deposition (CVD) of two-dimensional (2D) materials over the last two decades. The review summarized the state-of-the-art experimental synthesis and modelling and simulation on 2D materials CVD growth. Firstly, the family of 2D materials, and their CVD growth processes are introduced. Secondly, the experimental synthesis and modelling and simulation on graphene growth are discussed. In particular, the applications of reactive molecular dynamics methods, kinetic Monte Carlo and density-functional theory in 2D material growth are addressed. Then, the CVD growth of hexagonal boron nitride and transition metal dichalcogenides are further discussed, focusing on the effects of reaction conditions (growth temperature, pressure, vapour-phase composition, etc.) on the domain morphologies, edge structures and grain boundaries of 2D materials. Last, conclusions and outlooks are presented.
Keywords: Graphene, Hexagonal boron nitride, Transition metal dichalcogenides, Chemical vapor deposition
DOI: 10.3233/JCM-226864
Journal: Journal of Computational Methods in Sciences and Engineering, vol. 23, no. 5, pp. 2595-2608, 2023
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