Affiliations: Department of Biomedical Engineering, Medical Imaging
Devices, Detectors and Biosensors Laboratory, University of Akron, Akron OH
44325, USA. | Department of Physics, University of Cincinnati,
Cincinnati, OH 45221, USA. | Department of Radiology, Northeastern Ohio
Universities College of Medicine (NEOUCOM), Rootstown, OH 44272, USA. | Harvard Medical School, Boston, MA 02114, USA.
Note: [] Corresponding author: George C. Giakos, Olson Research Center,
Department of Biomedical Engineering, University of Akron, Akron, OH 44325,
USA. Tel.: +1 330 972-6976; Fax: +1 330 374-8834; E-mail:
[email protected].
Abstract: CdZnTe is one of the most promising semiconductor
material in the field of digital X-ray imaging, and may be operated at room
temperature. To improve the detector characteristics, ternary systems such as
Cd1-xZnxTe were grown by the high pressure Bridgman (HPG)
technique. The signal performance characteristics of quasi-resistive
Cd1-xZnxTe semiconductor detectors, was studied at
different directions of irradiation, within the X-ray diagnostic energy range.
The experimental results suggest that the total efficiency of these
semiconductor detectors depends upon the energy absorption efficiency as well
as the charge collection efficiency. This imaging detector allows one to
investigate methods to improve the detection and imaging performance parameters
as part of the development of an X-ray imaging system.
