Affiliations: [a] Department of Physics, GC University, Lahore, Pakistan
| [b] Department of Physics, Lahore Garrison University, Lahore, Pakistan
| [c] Department of Physics, Government Associate College Narang Mandi, Narang Mandi, Pakistan
| [d] Department of Physics, Government Dyal Sing Graduate College Lahore, Lahore, Pakistan
Correspondence:
[*]
Corresponding author. Muhammad Imran, Department of Physics, GC University, Lahore, Pakistan. Tel.: +92 42 99211637; E-mail: [email protected].
Abstract: ZnO is promising material for the electronic and optoelectronic devices. In present work we have fabricated the ZnO film by DC reactive magnetron sputtering. The variations of reactive and sputtering gases affect the crystallite size and band gap of ZnO film. In present work the ZnO film is prepared at 50 watt power by DC reactive spurting method. The fuzzy simulation has been performed to estimate the best argon oxygen gas ratio which gives the better crystallinity and band-gap. The structural analysis shows that the ZnO film has hexagonal wurtzite structure. The UV-vis spectroscopy has been employed to find the band gap.the measured band gap value of ZnO is 3.21 eV. The fuzzy rule based system and characterization results are in accordance with each other with a minimal difference of less than 1%.
Keywords: DC Sputtering, Zinc oxide film, band gap, resistivity
