Abatement of waste gases and water during the processes of semiconductor fabrication

Article type: Research Article

Authors: Wen, Rui-mei | Liang, Jun-wu

Affiliations: Tongji University, Shanghai 200092, China | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Note: [] Corresponding author, E-mail: [email protected]

Abstract: The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are presented in this article to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus,HF, HCl, NO_2, and SO_3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO_3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standardsset by the state Environmental Protection Administration of China.

Keywords: waste gases, waste water, abatement, pollutant, semiconductor

Journal: Journal of Environmental Sciences, vol. 14, no. 4, pp. 482-488, 2002