Searching for just a few words should be enough to get started. If you need to make more complex queries, use the tips below to guide you.
Issue title: Silicon Clusters
Guest editors: G. Maroulisx and A. Zdetsisy
Article type: Research Article
Authors: Zdetsis, Aristides D.
Affiliations: Department of Physics, University of Patras, GR-26500 Patras, Greece. E-mail: [email protected] | [x] Department of Chemistry, University of Patras, Greece | [y] Department of Physics, University of Patras, Greece
Abstract: The structural, electronic, dynamical and spectral properties of Si6 and its ions (Si61−, Si62−, and Si61+) have been examined using a variety of high level ab initio techniques, including quadratic configuration interaction, coupled cluster, and density functional theory (DFT) with the hybrid B3LYP functional. Various high quality correlation-consistent basis sets, ranging from 2Z up to 5Z quality, were employed for the DFT calculations. It is shown that not only the ground state structure, but also the structure of the excited states, as well as the structure of the anions and cations of Si6 are controversial. Each one of the three competing structures for the ground state, with Cs/C2v, D4h, and C2v symmetry, has been considered by different investigators as the lowest energy structure either of the neutral cluster, or of its anion or cation (or both). In a spirit of “structural democracy” it is demonstrated that the Cs/C2v, D4h, and 2v structures can be safely assigned as the ground states of the neutral, anion, and cation clusters respectively. The present results, which support the structural plasticity (fluxionality) of Si6, are in excellent agreement with experiment, including Raman and IR spectra, ionization energies, electron affinities as well as vibrationally resolved photoelectron spectra. The paradigm of Si6 could be very helpful for other silicon clusters as well.
DOI: 10.3233/JCM-2007-73-407
Journal: Journal of Computational Methods in Sciences and Engineering, vol. 7, no. 3-4, pp. 257-272, 2007
IOS Press, Inc.
6751 Tepper Drive
Clifton, VA 20124
USA
Tel: +1 703 830 6300
Fax: +1 703 830 2300
[email protected]
For editorial issues, like the status of your submitted paper or proposals, write to [email protected]
IOS Press
Nieuwe Hemweg 6B
1013 BG Amsterdam
The Netherlands
Tel: +31 20 688 3355
Fax: +31 20 687 0091
[email protected]
For editorial issues, permissions, book requests, submissions and proceedings, contact the Amsterdam office [email protected]
Inspirees International (China Office)
Ciyunsi Beili 207(CapitaLand), Bld 1, 7-901
100025, Beijing
China
Free service line: 400 661 8717
Fax: +86 10 8446 7947
[email protected]
For editorial issues, like the status of your submitted paper or proposals, write to [email protected]
如果您在出版方面需要帮助或有任何建, 件至: [email protected]